PRINCIPAL OF X-RAY TOPOGRAPHY

Introduction

For the growth of high quality thin-film semiconductor material, the quality of the underlying single crystal substrate can be one of the most influential variables.  X-ray topography is an imaging technique that allows the direct observation of defects in a single crystal substrate wafer and hence allows control of this critical quality variable. A dedicated X-ray topography system will typically be equipped with a 2-Dimensional detector and an X-Y mapping sample stage.

Principle of X-ray Topography (Transmission)
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Crystal defect analysis of a single crystal substrate by X-ray reflection topography

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AUTOMATED MULTIPURPOSE X-RAY DIFFRACTOMETER (XRD) WITH GUIDANCE SOFTWARE

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